Analysis of Time Dependent Low Level Exposure to Gallium Arsenide on Blood ALAD activity, Glutathione and Lipid per oxidation levels in Rat Blood, Liver and Kidney

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Braham Deo Gupta* and R Vijayaraghavan

        School of Mathematics and Allied Sciences, Jiwaji University, Gwalior, Madhya Pradesh, India

Gallium arsenide (GaAs), an intermetallic semiconductor has widespread applications in the electronic industry. GaAs has the ability to dissociate into its constitutive moieties, arsenic and gallium which might be responsible for the oxidative stress. The present study was aimed at evaluating, effect  of  gallium arsenide on blood ALAD activity, glutathione and lipid per oxidation levels in rat blood, liver and kidney on exposure of 1, 2 and 6 months. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased TBARS levels, decreased glutathione levels in blood and tissues. We also noted the decreased activity of ALAD in rat blood on exposure to gallium arsenide.  The study demonstrates that the time dependent exposure to low level gallium arsenide led to increased in lipid per oxidation, decrease glutathione level and ALAD activity which concludes that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress in rats and exerts its toxicity in time dependent manner related to its dissolution and maximum toxicity by increasing the time period of exposure.

 

Keywords: Gallium arsenide, TBARS, Oxidative stress, Glutathione, Rats

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